Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode

Broadband, Ultra-High-Responsive Monolayer MoS2/SnS2 Quantum-Dot-Based Mixed-Dimensional Photodetector

Fabrication of 1D Te/2D ReS2 Mixed-Dimensional van der Waals p-n Heterojunction for High-Performance Phototransistor

Scalable manufacture of vertical p‐GaN/n‐SnO2 heterostructure for self‐powered ultraviolet photodetector, solar cell and dual‐color light emitting diode - Su - 2021 - InfoMat - Wiley Online Library

a Schematic of SnS2 photodetectors. b Spectral photoresponse of SnS2

Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices

a) Metal−semiconductor (M-S) interface band structure and the change

2D Material Infrared Photonics and Plasmonics

Polarity-Tunable Photocurrent through Band Alignment Engineering in a High- Speed WSe2/SnSe2 Diode with Large Negative Responsivity

Broadband, Ultra-High-Responsive Monolayer MoS2/SnS2 Quantum-Dot-Based Mixed-Dimensional Photodetector

Polarization-Sensitive Self-Powered Type-II GeSe/MoS2 van der Waals Heterojunction Photodetector

a Low-magnification TEM image of SnS2 nanosheet. b Corresponding HRTEM